| PART |
Description |
Maker |
| KM23V8100DET KM23V8100DT |
8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM(8M(1Mx8 /512Kx16) CMOS掩膜ROM) 800万位Mx8 / 512Kx16）的CMOS掩模ROM00万位Mx8 / 512Kx16）的CMOS掩膜光盘
|
Samsung Semiconductor Co., Ltd.
|
| 29F800 MX29F800TMC-12 MX29F800BMC-90 MX29F800BTC-9 |
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY
8M-BIT [1Mx8/512Kx16] CMOS FLASH MEMORY 512K X 16 FLASH 5V PROM, 120 ns, PDSO44
|
Macronix International Co., Ltd.
http://
|
| KM23C8100DET KM23C8100ET |
8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
|
Samsung Semiconductor
|
| K5A3280YBA |
32M Bit (4Mx8/2Mx16) Dual Bank NOR Flash Memory / 8M(1Mx8/512Kx16) Full CMOS SRAM
|
SAMSUNG
|
| MBM29LV800BA-12PBT |
IC,EEPROM,NOR FLASH,512KX16/1MX8,CMOS,BGA,48PIN
|
Fujitsu
|
| 29SL800CT-90 29SL800CB-90 MX29SL800CTXHC-90 MX29SL |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 1.8V ONLY FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX26LV800BTC-55G MX26LV800BTC-70 MX26LV800BTC-70G |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| BS616LV8016 BS616LV8016FIP70 BS616LV8016FC BS616LV |
Asynchronous 8M(512Kx16) bits Static RAM
From old datasheet system
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, Inc.
|
| BS616LV8018 BS616LV8018FIP70 BS616LV8018FC BS616LV |
From old datasheet system
Asynchronous 8M(512Kx16) bits Static RAM
Very Low Power/Voltage CMOS SRAM 512K X 16 bit 非常低功电压CMOS SRAM的为512k × 16
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| MX26LV800BXBC-70G MX26LV800TXBC-70G MX26LV800BXBC- |
8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY HIGH SPEED eLiteFlashTM MEMORY 512K X 16 FLASH 3V PROM, 55 ns, PBGA48
|
Macronix International Co., Ltd.
http://
|
